石墨烯应用：概论（英文版）
Applications of Graphene: An Overview by Edward L. WolfEnglish | 2014 | ISBN: 3319039458 | 84 pages | PDF | 2,1 MB
Graphene is presented and analyzed as a replacement for silicon. The Primary focus is on solar cell and CMOS device technologies, with attention to the fabrication methods, including extensions needed, in each case. Specialized applications for graphene within the existing silicon technology are discussed and found to be promising.
Contents
1 Physical and ElectricalProperties of Graphene. . . . . . . . . . . . . . . 1
1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.2 Basic Lattice and Electronic Structure . . . . . . . . . . . . . . . . . . . 3
1.3 Practical Consequences of One-Atom Thickness . . . . . . . . . . . . 9
2 Practical Productions of Graphene, Supply and Cost. . . . . . . . . . . 19
2.1 Graphite-Based Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2 Direct Spontaneous Synthesis of Crystalline Graphene
in Plasma and in Solution . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2.3 Comparison of Chemical Graphenes to Carbon Black,
Activated Carbon and Carbon Fiber . . . . . . . . . . . . . . . . . . . . . 28
2.4 Chemical Vapor Deposition-Based Methods CVD . . . . . . . . . . . 31
2.5 Silicon Carbide Epitaxial Growth . . . . . . . . . . . . . . . . . . . . . . 35
3 Solar Cells and Electrodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
39
3.1 Solar Cell Concepts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.2 Organic Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.3 Cells Utilizing Dye Absorbers. . . . . . . . . . . . . . . . . . . . . . . . . 41
3.4 Cells Utilizing CdTe Absorbers . . . . . . . . . . . . . . . . . . . . . . . . 43
3.5 Cells Utilizing Si Absorbers . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.6 Touch Screens and Other Electrodes . . . . . . . . . . . . . . . . . . . . 46
4 Graphene Logic Devices and Moore’s Law . . . . . . . . . . . . . . . . . . 51
4.1 Field Effect Transistor FET Switches. . . . . . . . . . . . . . . . . . . . 52
4.2 Tunneling FET Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
4.3 Graphene Tunneling FET Devices . . . . . . . . . . . . . . . . . . . . . . 62
4.4 Manufacturability of Graphene Devices . . . . . . . . . . . . . . . . . . 65
5 Niche Applicationsof Graphene WithinSilicon Technology. . . . . . 69
5.1 High Frequency FET Graphene Transistors. . . . . . . . . . . . . . . . 69
5.2 Interconnects on Chips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3 Flash Memory Cells. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
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