2015年新著——碳化硅器件与工艺进展（英文版）
\"Advanced Silicon Carbide Devices and Processing\" ed. by Stephen E. Saddow and Francesco La ViaInTAvE | 2015 | ISBN: 9535121685 9789535121688 | 250 pages | PDF | 15 MB
Authors organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics.
Given the importance of advanced microsystems and sensors based on SiC, a review on 3C-SiC for both microsystem and electronic applications also included.
Contents
Preface
1 Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material
2 3C-SiC — From Electronic to MEMS Devices
3 Impact of Dielectric Formation and Processing Techniques on the Operation of 4H-SiC MOSFETs
4 Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry
5 Comparative Study of Optimally Designed DC-DC Converters with SiC and Si Power Devices
6 Novel Developments and Challenges for the SiC Power Devices
7 High-responsivity SiC Ultraviolet Photodetectors with SiO2 and Al2O3 Films
8 Silicon Carbide for Novel Quantum Technology Devices
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来源: 2015年新著——碳化硅器件与工艺进展（英文版）
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